PLD法とは、ターゲットと呼ばれる原料にレーザー光（本研究で扱う装置で

PLD法とは、ターゲットと呼ばれる原料にレーザー光（本研究で扱う装置では波長 243 nm の KrF エキシマレーザー）を照射し、ターゲットからはじき出された原子を基板上に薄膜として蒸着する方法である。PLD法では、非平衡プロセスにより反応が進行するため、通常では得られない準安定な物質を合成することもできる。そのため、本研究で扱う準安定構造のa-TaONの合成には打ってつけである。また、1原子層ずつ堆積していくため、望みの原子を望みの順序で積み上げ、新しい物質を合成することも可能となる。PLD法の特徴としては、
・酸化物のような高融点物質の製膜が容易
・ターゲットと薄膜の成分元素のずれが少ない
・アブレーションレーザー条件による製膜速度の精密な制御が可能
・ターゲットの交換が簡単で、異種薄膜の積層化が容易

結果 (英語) 1:

Stuff called targets in laser light with the PLD (243 nm KrF excimer laser is treated in this study unit) way to as a thin film deposited on atomic radiation and, were disgorged from the target. The reaction progresses by non-equilibrium processes in pulsed laser deposition, usually for metastable obtained can also synthesize substances. In the synthesis of the a-TaON metastable structure in this study dealing with patrons in the. In addition, 1 and will be in the desired order, atoms want to synthesize new materials for accumulation by atomic layer. As the characteristics of pulsed laser deposition • Easy, such as oxides of high melting point materials deposition Off target and thin film elements for less. Allows for precise control of deposition rate by laser ablation -Target replacement is easy and simplifies heterogeneous thin-film multilayer structure

結果 (英語) 2:

The PLD method, the raw material to the laser beam which is called the target (in the apparatus treated in this study KrF excimer laser having a wavelength of 243 nm) is irradiated, it is a method for depositing were sputtered from the target atoms as a thin film on the substrate. In the PLD method, since the reaction by a non-equilibrium process progresses, it is also possible to synthesize normal metastable materials which can not be obtained by. Therefore, the synthesis of a-TaON of metastable structures dealt with in this study is looping it hit. Further, since the gradually deposited one atomic layer, and stacking the desired atoms in desired order, it becomes possible to synthesize a new substance. The characteristics of the PLD method,
high melting point film is easy materials such as, oxide
displacement is less of target and the thin film of the component elements
can be precise control of the deposition rate by ablation laser conditions
exchange of target it is simple, easy to laminated heterogeneous thin film

結果 (英語) 3:

And PLD method, laser light source and target KrF 243 nm excimer laser at the wavelength of the device (the) from the target atom is deposited as a thin film on a substrate to be ejected. PLD method for non-equilibrium process reaction proceeds, which can not be obtained by normal can be synthesized in a metastable materials. Therefore, it is the thing of a TaON metastable structure synthesized in this study. In addition, by atomic layer deposition and theStacked in order to hope, hope atoms, which makes it possible to synthesize new compounds. The characteristics of PLD method and the like of the oxide film which is made of high melting point materials precision rate made by laser ablation at the condition of the component elements of the thin film at the target and easy control of the target can be exchanged at a simple, easily laminated composite thin films