合成方法および条件a-TaON単結晶エピタキシャル薄膜の合成には、2.

合成方法および条件
a-TaON単結晶エピタキシャル薄膜の合成には、2.1節で触れた、窒素プラズマアシストパルスレーザー堆積法（NPA-PLD法）を使用した。薄膜の作成においては、ラジカルソースの種類、ターゲットの種類、成長温度（基板温度）、成長速度、テンプレート基板の種類を中心として条件を検討した。詳細な条件は下記に示した。

ラジカルソース： ECRラジカルソース及びRFラジカルソース
ターゲット: Ta2O5, b-TaON 及び TaN
基板： Nb:SrTiO3(0.05 w%) (NSTO) (100)、(LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (LSAT) (100)、LaSrAlO4 (LSAO) (001)、KTaO3(KTO) (100)、MgAl2O4(MAO) (100)
成長温度（基板温度）： 650 , 700 , 750 , 800度
レーザー繰り返し周波数： 3, 4 or 5 Hz
雰囲気： 窒素 （9x10-6 ~ 1x10-5 Torr）

薄膜の成長温度、成長速度及び格子整合それぞれの効果を調べた。Figure.3-1-1にテンプレートに使う単結晶基板を格子定数を軸とした数直線上に示した。得られた薄膜の膜厚は、約45 nm程度である。詳細な結果については次節3.2で説明する。

結果 (英語) 2:

Synthetic methods and conditions
for the synthesis of a-TaON single crystal epitaxial thin film, mentioned in Section 2.1, we used nitrogen plasma assisted pulsed laser deposition method (NPA-PLD method). In the creation of the thin film, the kind of radical source, the type of target, the growth temperature (substrate temperature), we examined the growth rate, conditions around the type of template substrate. Detailed conditions it is shown below. Radical Source: ECR radical source and RF radical source target: Ta2O5, b-TaON and TaN board: Nb: SrTiO3 (0.05 w%) (NSTO) (100), (LaAlO3) 0.3- (SrAl0.5Ta0.5O3) 0.7 ( LSAT) (100), LaSrAlO4 (LSAO) (001), KTaO3 (KTO) (100), MgAl2O4 (MAO) (100) growth temperature (substrate temperature): 650, 700, 750, 800 degrees and laser repetition frequency: 3, 4 or 5 Hz atmosphere: nitrogen (9x10-6 ~ 1x10-5 Torr) thin film growth temperature, we were examined for each growth rate and lattice matching effect. The single crystal substrate is shown on the number line which is the axis lattice constant to be used for template Figure.3-1-1. The thickness of the obtained thin film is on the order of about 45 nm. It described in the next section 3.2 for detailed results.

結果 (英語) 3:

Synthesis and the synthesis method of TaON conditions at a single crystal epitaxial thin films in Clause 2.1, nitrogen plasma assisted pulsed laser deposition (NPA -- PLD method) was used. In the preparation of the thin film, the kind of radical source, types of target temperature (substrate temperature), the growth conditions, growth rate, and examined the template type substrate. Detailed conditions are shown in the following. Source: too radical source at the target and source RF ECR radical radical Ta O, 2. 5.B: Nb TaON and TaN at the substrate 3 by SrTiO 0.05 w (100 percent) NSTO. Sub. 3 LaAlO 0.3 SrAl 0.5 Ta 0.5 O 0.7 LSAT. (3) of (100) and (001). LSAO LaSrAlO 4 and 3. KTaO KTO 100 MgAl 2 O MAO 4. Growth temperature (substrate temperature): 100)
650, 700 750,, repetition frequency laser at 800. Degree: 4 or 5, Hz at nitrogen atmosphere: To investigate the effects of growth temperature and growth rate of lattice matching, 9 x 10 (- 6 to 1 x 10
RI Torr thin film. Figure.In the case shown in a straight line on a single crystal substrate lattice constants used in the number of templates. The film thickness of the thin film thus obtained is about 45 nm. Detailed results will be described in the next section 3.2. At