Furthermore, 750 degrees, and some of it is film the thin film 4 Hz been subjected to the post-annealing by the conditions described below for the purpose of generating the anion vacancies. Post-annealing was used the same as the chamber subjected to the film formation. Annealing Temperature: 800 ° Atmosphere: Base pressure (about 2x10-7 Torr) at a generally oxides or nitrides, in reducing conditions, such as high-temperature vacuum atmosphere, it is known that the anion vacancies are generated. Acid or a nitride a-TaON even anion vacancies arise, we also discuss what appears is a change in the physical properties by the amount of anion vacancies. Detailed results are I will mention in the following Section 3.4. Finally, briefly we will explain the analysis means of the synthesized thin film. First, the evaluation of the structural analysis and the crystalline I was using X-ray diffraction measurement and TEM. about what further succeeded in synthesizing, in determining the composition, NRA, SEM-EDX, the TEM-EDX, the spectroscopic ellipsometry for the evaluation of optical characteristics, evaluated two-terminal resistance measurement of transport properties, four-terminal resistance measurement and a hole the effect measurement I went.
翻訳されて、しばらくお待ちください..